Capacitive interaction model for Aharonov-Bohm effects of a quantum Hall antidot

Details Capacitive interaction model for Aharonov-Bohm effects of a quantum Hall antidot Capacitive interaction model for Aharonov-Bohm effects of a quantum Hall antidot

2010-09-06

arxiv.org/abs/1009.1004v2

Physical Review B 83, 035308 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 6 figures

Scientific paper

10.1103/PhysRevB.83.035308

We derive a general capacitive interaction model for an antidot-based interferometer in the integer quantum Hall regime, and study Aharonov-Bohm resonances in a single antidot with multiple bound modes, as a function of the external magnetic field or the gate voltage applied to the antidot. The pattern of Aharonov-Bohm resonances is significantly different from the case of noninteracting electrons. The origin of the difference includes charging effects of excess charges, charge relaxation between the bound modes, the capacitive interaction between the bound modes and the extended edge channels nearby the antidot, and the competition between the single-particle level spacing and the charging energy of the antidot. We analyze the patterns for the case that the number of the bound modes is 2, 3, or 4. The results agree with recent experimental data.

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