Design of a semiconductor ferromagnet in a quantum dot artificial crystal

Details Design of a semiconductor ferromagnet in a quantum dot artificial crystal Design of a semiconductor ferromagnet in a quantum dot artificial crystal

2001-01-17

arxiv.org/abs/cond-mat/0101252v1

Appl. Phys. Lett. vol. 78, p. 3702 (2001)

Physics

Condensed Matter

Materials Science

12 pages, 3 figures included. For related information, visit http://www.brl.ntt.co.jp/people/tamura/

Scientific paper

10.1063/1.1376434

We present the theoretical design of quantum dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation (LSDA) show that our designed QD artificial crystal from a structure comprising the crossing 0.104-micrometer-wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal has the ferromagnetic ground state when the flat band is half-filled, even though it contains no magnetic elements. The ferromagnetic and the paramagnetic state can be freely switched by changing the electron filling via a gate voltage.

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