Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Details Lattice constant in diluted magnetic semiconductors (Ga,Mn)As Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

2003-02-07

arxiv.org/abs/cond-mat/0302150v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.67.153203

We use the density-functional calculations to investigate the compositional dependence of the lattice constant of (Ga,Mn)As containing various native defects. The lattice constant of perfect mixed crystals does not depend much on the concentration of Mn. The lattice parameter increases if some Mn atoms occupy interstitial positions. The same happens if As antisite defects are present. A quantitative agreement with the observed compositional dependence is obtained for materials close to a complete compensation due to these two donors. The increase of the lattice constant of (Ga,Mn)As is correlated with the degree of compensation: the materials with low compensation should have lattice constants close to the lattice constant of GaAs crystal.

Affiliated with

Also associated with

No associations

Rating

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Lattice constant in diluted magnetic semiconductors (Ga,Mn)As, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lattice constant in diluted magnetic semiconductors (Ga,Mn)As will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-294703