Photovoltage Effects in Photoemission from Thin GaAs Layers

Details Photovoltage Effects in Photoemission from Thin GaAs Layers Photovoltage Effects in Photoemission from Thin GaAs Layers

2001-03-23

arxiv.org/abs/cond-mat/0103500v1

Phys.Lett. A282 (2001) 309-318

Physics

Condensed Matter

Materials Science

LaTeX RevTeX 11 pages, 6 figures

Scientific paper

10.1016/S0375-9601(01)00202-X

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.

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