Tunneling Conductance of The Graphene SNS Junction with a Single Localized Defect

Details Tunneling Conductance of The Graphene SNS Junction with a Single Localized Defect Tunneling Conductance of The Graphene SNS Junction with a Single Localized Defect

2010-06-07

arxiv.org/abs/1006.1386v1

Journal of Experimental and Theoretical Physics 110, 612-616 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

10.1134/S1063776110040084

We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.

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