The onset of exciton absorption in modulation doped GaAs quantum wells

Details The onset of exciton absorption in modulation doped GaAs quantum wells The onset of exciton absorption in modulation doped GaAs quantum wells

2000-03-31

arxiv.org/abs/cond-mat/0003505v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures

Scientific paper

10.1103/PhysRevB.62.15390

We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge singularity to a hydrogen-like behavior. At this density both the lineshape and the transitions energies of the excitons change. We study the density dependence of the singularity exponent $\alpha $ and show that disorder plays an important role in determining the energy scale over which it grows.

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