Reply to Comment (cond-mat/0311174)

Details Reply to Comment (cond-mat/0311174) Reply to Comment (cond-mat/0311174)

2004-01-05

arxiv.org/abs/cond-mat/0401031v2

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures. More data included

Scientific paper

We demonstrate that the experimental data on the temperature dependence of
the resistivity and conductivity for high-mobility Si-MOS structures, obtained
for a wide range of densities (~ 1:7) at intermediate temperatures, agree
quantitatively with theory of interaction corrections in the ballistic regime,
T\tau >1. Our comparison does not involve any fitting parameters.

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