Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

Details Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

2008-08-06

arxiv.org/abs/0808.0902v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.79.094414

The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional theory. At voltages smaller than 20 mVolt the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority spin-band. In the parallel configuration this contribution is quenched by a voltage comparable to the energy width of the interface state, whereas it persists at all voltages in the anti-parallel configuration. At higher bias the transport is mainly determined by the relative positions of the $\Delta_1$ band-edges in the two Fe electrodes, which causes a decrease of the TMR.

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