Resistance profile measurements on a symmetric electrical pulse induced resistance change device

Details Resistance profile measurements on a symmetric electrical pulse induced resistance change device Resistance profile measurements on a symmetric electrical pulse induced resistance change device

2005-07-19

arxiv.org/abs/cond-mat/0507432v2

refer to Appl. Phys. Lett. 87, 233506 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

14 pages, 4 figures

Scientific paper

We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitations of pulse switching voltage, such a symmetric electrical pulse induced resistance change device can exhibit either no net device resistance switching at room temperature, or bipolar switching with the resistance hysteresis curve exhibiting a "table leg" structure. The resistance measurements are made using surface scanning Kelvin probe microscopy, which allows for the measurement of the profile of resistance from one electrode, across the Pr0.7Ca0.3MnO3 material and into the second electrode, both before resistance switching and after switching. The results show that resistance switching in the symmetric device occurs primarily in the interface region within about 1 to 3 micron of the electrical contact surface. Resistance switching is also observed in the bulk Pr0.7Ca0.3MnO3 material although at a lower level. Symmetry considerations for a two terminal symmetric device that can switch resistance are discussed, and the data reported here is consistent with the symmetric model previously developed.

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