Spin injection and accumulation in inhomogeneous semiconductors

Details Spin injection and accumulation in inhomogeneous semiconductors Spin injection and accumulation in inhomogeneous semiconductors

2005-07-19

arxiv.org/abs/cond-mat/0507427v1

Physica E 32, 412 (2006)

Physics

Condensed Matter

Materials Science

4 pages

Scientific paper

10.1016/j.physe.2005.12.152

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.

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