Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes

Details Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes

2011-10-02

arxiv.org/abs/1110.0676v1

Physics

Condensed Matter

Materials Science

14pages, 3figures

Scientific paper

We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impossible because of the electric potential distribution in the depth direction in the Si channel. Although apparent signals indicating the spin-valve effect were not detected, we mainly present structural influence on the electric potential distribution which is indispensable for the analyses of spin-dependent transport.

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