Transient localization in crystalline organic semiconductors

Details Transient localization in crystalline organic semiconductors Transient localization in crystalline organic semiconductors

2010-10-14

arxiv.org/abs/1010.2893v2

Phys. Rev. B 83, 081202(R) (2011)

Physics

Condensed Matter

Materials Science

Revised version, to appear in Phys. Rev. B Rapid Communications

Scientific paper

10.1103/PhysRevB.83.081202

A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to extract fundamental quantities such as the elastic and inelastic scattering rates, as well as the localization length in disordered systems. When applied to crystalline organic semiconductors, an incipient electron localization caused by large dynamical lattice disorder is unveiled, implying a breakdown of semiclassical transport.

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