Energy relaxation rate of 2D hole gas in GaAs/InGaAs/GaAs quantum well within wide range of conductivitiy

Details Energy relaxation rate of 2D hole gas in GaAs/InGaAs/GaAs quantum well within wide range of conductivitiy Energy relaxation rate of 2D hole gas in GaAs/InGaAs/GaAs quantum well within wide range of conductivitiy

2010-10-14

arxiv.org/abs/1010.2870v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

13 pages, 6 figures

Scientific paper

The nonohmic conductivity of 2D hole gas (2DHG) in single $GaAsIn_{0.2}Ga_{0.8}AsGaAs$ quantum well structures within the temperature range of 1.4 - 4.2K, the carrier's densities $p=(1.5-8)\cdot10^{15}m^{-2}$ and a wide range of conductivities $(10^{-4}-100)G_0$ ($G_0=e^2/\pi\,h$) was investigated. It was shown that at conductivity $\sigma>G_0$ the energy relaxation rate $P(T_h,T_L)$ is well described by the conventional theory (P.J. Price J. Appl. Phys. 53, 6863 (1982)), which takes into account scattering on acoustic phonons with both piezoelectric and deformational potential coupling to holes. At the conductivity range $0.01G_0<\sigma

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