Topological response theory of doped topological insulators

Details Topological response theory of doped topological insulators Topological response theory of doped topological insulators

2011-01-17

arxiv.org/abs/1101.3104v2

Phys. Rev. Lett. 107, 206602 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

15 pages (4 + Refs + Supplementary Material), 5 figures . V2 includes substantial changes, including more experimentally relev

Scientific paper

10.1103/PhysRevLett.107.206602

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.

Affiliated with

Also associated with

No associations

Rating

Topological response theory of doped topological insulators does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Topological response theory of doped topological insulators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Topological response theory of doped topological insulators will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-285042