Ferromagnet proximity effects and magnetoresistance of bilayer graphene

Details Ferromagnet proximity effects and magnetoresistance of bilayer graphene Ferromagnet proximity effects and magnetoresistance of bilayer graphene

2008-01-24

arxiv.org/abs/0801.3829v2

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in the graphene channel strongly depends on the magnetization orientation of two ferromagnetic layers, $\mathbf{M_{1}}$ and $\mathbf{M_{2}} $. While the parallel configuration $\mathbf{M_{1}}= \mathbf{M_{2}}$ leads to simple spin splitting of both conduction and valence bands, an energy gap is induced as soon as the angle $\theta$ between $\mathbf{M_{1}}$ and $% \mathbf{M_{2}}$ becomes non-zero with the maximum achieved at $\theta=\pi$ (i.e., antiparallel alignment). Consequently, bilayer graphene may exhibit a sizable magnetoresistive effect in the current-in-plane configuration. A rough estimate suggests the resistance changes on the order of tens of percent at room temperature. This effect is expected to become more pronounced as the temperatures decreases.

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