Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors

Details Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors

2001-10-18

arxiv.org/abs/cond-mat/0110381v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1063/1.1459489

We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. These results indicate new functionalities that may be utilized in nano-spintronic devices in which the spin state is electro-statically controlled via the electron occupation number.

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