Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2

Details Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2 Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2

2008-01-24

arxiv.org/abs/0801.3685v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

3 pages, 5 figures, submitted to Journal of Non-crystalline Solids

Scientific paper

10.1016/j.jnoncrysol.2007.09.043

We discuss an inverse approach for atomistic modeling of glassy materials. The focus is on structural modeling and electronic properties of hydrogenated amorphous silicon and glassy GeSe2 alloy. The work is based upon a new approach "experimentally constrained molecular relaxation (ECMR)". Unlike conventional approaches (such as molecular dynamics (MD) and Monte Carlo simulations(MC), where a potential function is specified and the system evolves either deterministically (MD) or stochastically (MC), we develop a novel scheme to model structural configurations using experimental data in association with density functional calculations. We have applied this approach to model hydrogenated amorphous silicon and glassy GeSe2. The electronic and structural properties of these models are compared with experimental data and models obtained from conventional molecular dynamics simulation.

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