PbTe/PbSnTe heterostructures as analogues of topological insulators

Details PbTe/PbSnTe heterostructures as analogues of topological insulators PbTe/PbSnTe heterostructures as analogues of topological insulators

2012-02-10

arxiv.org/abs/1202.2315v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We investigate theoretically the PbTe/PbSnTe heterostructure grown in [111] direction, specifically a quantum wall (potential step of width d) of PbTe embedded in Pb_{1-x}Sn_{x}Te. For x large enough to lead to band inversion, and for large d, there are well-known gapless interface states associated with four L valleys. We show that for d \approx\ 10 nm the three pairs of states from oblique valleys strongly couple, and become gapped with a gap ~10 meV. On the other hand, the interface states from the [111] valley are essentially uncoupled, and they retain their helical character, remaining analogous to states at surfaces of thin layers of three-dimensional topological insulators.

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