Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2004-08-06
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
10.1103/PhysRevB.71.035321
We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the in-plane hole wavevector. The biaxial strain of SiGe QWs is found to be a key parameter that controls spin splitting. Application to SiGe field-effect transistor structures indicates that typical spin splitting at room temperature varies from a few tenth of meV in the case of Si QW channels to several meV for the Ge counterparts, and can be modified efficiently by gate-controlled variation of the perpendicular confining electric field. The analysis also shows that for sufficiently asymmetric QWs, spin relaxation is due mainly to the spin-splitting related D'yakonov-Perel' mechanism. In strained Si QWs, our estimation shows that the hole spin relaxation time can be on the order of a hundred picoseconds at room temperature, suggesting that such structures are suitable for p-type spin transistor applications as well.
Glavin B. A.
Kim Ki Wook
No associations
LandOfFree
Spin relaxation of two-dimensional holes in strained asymmetric SiGe quantum wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Spin relaxation of two-dimensional holes in strained asymmetric SiGe quantum wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin relaxation of two-dimensional holes in strained asymmetric SiGe quantum wells will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-274455