Non-volatile switching in graphene field effect devices

Details Non-volatile switching in graphene field effect devices Non-volatile switching in graphene field effect devices

2008-05-27

arxiv.org/abs/0805.4095v1

IEEE Electron Device Letters, Vol. 29, Iss. 8, pp. 952-954, Aug. 2008

Physics

Condensed Matter

Materials Science

14 pages, 4 figures, submitted to IEEE EDL

Scientific paper

10.1109/LED.2008.2001179

The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" to an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to non-volatile memories and novel neuromorphic processing concepts.

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