Two-electron dephasing in single Si and GaAs quantum dots

Details Two-electron dephasing in single Si and GaAs quantum dots Two-electron dephasing in single Si and GaAs quantum dots

2012-03-28

arxiv.org/abs/1203.6332v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures

Scientific paper

We study the dephasing of two-electron states in a single quantum dot in both GaAs and Si. We investigate dephasing induced by electron-phonon coupling and by charge noise analytically for pure orbital excitations in GaAs and Si, as well as for pure valley excitations in Si. In GaAs, polar optical phonons give rise to the most important contribution, leading to a typical dephasing rate of ~5.9 GHz. For Si, intervalley optical phonons lead to a typical dephasing rate of ~140 kHz for orbital excitations and ~1.1 MHz for valley excitations. For harmonic, disorder-free quantum dots, charge noise is highly suppressed for both orbital and valley excitations, since neither has an appreciable dipole moment to couple to electric field variations from charge fluctuators. However, both anharmonicity and disorder break the symmetry of the system, which can lead to increased dipole moments and therefore faster dephasing rates.

Affiliated with

Also associated with

No associations

Rating

Two-electron dephasing in single Si and GaAs quantum dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Two-electron dephasing in single Si and GaAs quantum dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-electron dephasing in single Si and GaAs quantum dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-273334