Topological thermoelectric effects in spin-orbit coupled electron and hole doped semiconductors

Details Topological thermoelectric effects in spin-orbit coupled electron and hole doped semiconductors Topological thermoelectric effects in spin-orbit coupled electron and hole doped semiconductors

2012-03-27

arxiv.org/abs/1203.6109v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 8 figures

Scientific paper

We compute the intrinsic contributions to the Berry-phase mediated anomalous Hall and Nernst effects in electron- and hole-doped semiconductors in the presence of an in-plane magnetic field as well as Rashba and Dresselhaus spin orbit couplings. For both systems we find that the regime of chemical potential which supports the topological superconducting state in the presence of superconducting proximity effect can be characterized by plateaus in the topological Hall and Nernst coefficients flanked by well-defined peaks marking the emergence of the topological regime. The plateaus arise from a clear momentum space separation between the region where the Berry curvature is peaked (at the `near-band-degeneracy' points) and the region where the single (or odd number of) Fermi surface lies in the Brillouin zone. The plateau for the Nernst coefficient is at vanishing magnitudes surrounded by two peaks of opposite signs as a function of the chemical potential. These results could be useful for experimentally deducing the chemical potential regime suitable for realizing topological states in the presence of proximity effect.

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