Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

Details Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

2007-11-13

arxiv.org/abs/0711.1945v1

APPLIED PHYSICS LETTERS 91, 112102 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2779970

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2\Delta/e$, where $\Delta$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.

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