Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors

Details Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors

2002-03-07

arxiv.org/abs/cond-mat/0203173v3

Phys. Rev. B 66, 045207 (2002).

Physics

Condensed Matter

17 pages, 24 figures, 2 tables

Scientific paper

10.1103/PhysRevB.66.045207

We report the results of a Monte Carlo study of a model of (III,Mn)V diluted magnetic semiconductors which uses an impurity band description of carriers coupled to localized Mn spins and is applicable for carrier densities below and around the metal-insulator transition. In agreement with mean field studies, we find a transition to a ferromagnetic phase at low temperatures. We compare our results for the magnetic properties with the mean field approximation, as well as with experiments, and find favorable qualitative agreement with the latter. The local Mn magnetization below the Curie temperature is found to be spatially inhomogeneous, and strongly correlated with the local carrier charge density at the Mn sites. The model contains fermions and classical spins and hence we introduce a perturbative Monte Carlo scheme to increase the speed of our simulations.

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