Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

Details Spin accumulation in forward-biased MnAs/GaAs Schottky diodes Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

2004-01-12

arxiv.org/abs/cond-mat/0401197v1

Physics

Condensed Matter

Materials Science

13 pages, 4 figures, submitted for publication

Scientific paper

10.1103/PhysRevLett.93.097602

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.

Affiliated with

Also associated with

No associations

Rating

Spin accumulation in forward-biased MnAs/GaAs Schottky diodes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin accumulation in forward-biased MnAs/GaAs Schottky diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin accumulation in forward-biased MnAs/GaAs Schottky diodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-266308