Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment

Details Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment

2003-05-06

arxiv.org/abs/cond-mat/0305113v1

Phys. Rev. Lett. 91, 197002 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages and 2 figures

Scientific paper

10.1103/PhysRevLett.91.197002

We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R about R_Q = h/4e^2 = 6.45 kOhm, which are explained in terms of Cooper-pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.

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