Spin relaxation of localized electrons in n-type semiconductors

Details Spin relaxation of localized electrons in n-type semiconductors Spin relaxation of localized electrons in n-type semiconductors

2008-06-29

arxiv.org/abs/0806.4753v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to the special issue "Optical Orientation", Semiconductor Science and Technology

Scientific paper

10.1088/0268-1242/23/11/114009

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.

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