Formation of clean dimers during gas-source growth of Si(001)

Details Formation of clean dimers during gas-source growth of Si(001) Formation of clean dimers during gas-source growth of Si(001)

2002-10-18

arxiv.org/abs/cond-mat/0210400v1

Physics

Condensed Matter

Materials Science

6 pages, 8 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.67.115341

Elevated temperature STM measurements have shown that one key phase during gas-source homoepitaxy of Si(001) is the formation of clean Si ad-dimers from hydrogenated ad-dimers, though the mechanism for this formation is unknown. We present ab initio density functional calculations designed to explore this mechanism. The calculations show that there is a pathway consistent with the experimentally observed reaction rates, which proceeds via a meta-stable intermediate, and is effectively irreversible. This result fills a vital gap in our understanding of the atomic-scale details of gas-source growth of Si(001).

Affiliated with

Also associated with

No associations

Rating

Formation of clean dimers during gas-source growth of Si(001) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Formation of clean dimers during gas-source growth of Si(001), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of clean dimers during gas-source growth of Si(001) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-258787