Drag and Hall drag in a bi-layer system with pinholes

Details Drag and Hall drag in a bi-layer system with pinholes Drag and Hall drag in a bi-layer system with pinholes

1999-05-03

arxiv.org/abs/cond-mat/9905029v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

RevTeX, 16 pages. submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.60.5679

The transresistance and the Hall transresistance of dirty two-dimensional bi-layer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a non-zero Hall transresistance. In a geometry where the pinholes are concentrated in the middle of the sample, a quantum process gives the dominant contribution to both the ordinary transresistance and the Hall transresistance. Arising from the interplay between Coulomb repulsion, disorder and tunneling, the quantum contribution increases in a singular way as the temperature decreases.

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