Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

Details Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

2002-03-13

arxiv.org/abs/cond-mat/0203282v1

Phys. Rev. B 67, 115316 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevB.67.115316

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments.

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