Disorder effects in diluted ferromagnetic semiconductors

Details Disorder effects in diluted ferromagnetic semiconductors Disorder effects in diluted ferromagnetic semiconductors

2002-08-30

arxiv.org/abs/cond-mat/0208596v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

tex file + 4 .eps figures are included. submited to PRL

Scientific paper

10.1103/PhysRevB.68.205311

Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range exchange integrals and the Curie temperature as a function of the exchange parameter, magnetic impurity concentration and carrier density. The effect of the disorder (impurity scattering) appears to play a crucial role. The standard RKKY calculation (no scattering processes), strongly underestimate the Curie temperature and is inappropriate to describe magnetism in diluted magnetic semi-conductors. It is also shown that an antiferromagnetic exchange favors higher Curie temperature.

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