Spin inversion devices with Fano anti-resonances

Details Spin inversion devices with Fano anti-resonances Spin inversion devices with Fano anti-resonances

2008-03-06

arxiv.org/abs/0803.0993v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, regular paper

Scientific paper

10.1209/0295-5075/83/38001

Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier transmission. Based on these selection rules and the band shift induced by the magnetic field strength and the tilting angles, we propose an efficient spin inversion device. For a polarized incoming electron beam, we can determine from our theoretical approach, physical conditions for spin-inversion efficiency up to 80%. We visualize this mechanism in terms of conductance and the spacial behavior of the wave function amplitude along the superlattice.

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