Enhancement of the decay rate of nonequilibrium carrier distributions due to scattering-in processes

Details Enhancement of the decay rate of nonequilibrium carrier distributions due to scattering-in processes Enhancement of the decay rate of nonequilibrium carrier distributions due to scattering-in processes

1993-02-08

arxiv.org/abs/cond-mat/9302012v1

Physics

Condensed Matter

4 pages, figure available on request, RevTex 2.0. (NIST-BAS-93-01)

Scientific paper

10.1103/PhysRevB.49.7767

We show that, for some semiconductor devices and physical experiments, processes which scatter electrons {\em into} a state $|{\bf k}\rangle$ can contribute strongly to the decay of a nonequilibrium electron occupation of $|{\bf k}\rangle$. For electrons, the decay rate $\gamma({\bf k})$ is given by the sum of the total scattering-out {\em and scattering-in} rates of state $|{\bf k}\rangle$. The scattering-in term, which is often neglected in calculations, increases $\gamma({\bf k})$ of low energy electrons injected into semidegenerate systems, which includes many doped semiconductor structures at nonzero temperatures, particularly those of reduced dimensions.

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