Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

Details Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3 Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

2010-03-16

arxiv.org/abs/1003.3073v2

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures

Scientific paper

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.

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