Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

Details Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

2005-09-12

arxiv.org/abs/cond-mat/0509300v2

Phys. Rev. Lett. 95, 256603 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Final version

Scientific paper

10.1103/PhysRevLett.95.256603

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.

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