Unified description of ballistic and diffusive carrier transport in semiconductor structures

Details Unified description of ballistic and diffusive carrier transport in semiconductor structures Unified description of ballistic and diffusive carrier transport in semiconductor structures

2003-06-05

arxiv.org/abs/cond-mat/0306122v2

Physics

Condensed Matter

Materials Science

23 pages, 10 figures, REVTEX4

Scientific paper

10.1103/PhysRevB.68.115315

A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current consisting of carriers which move ballistically in the electric field provided by the band edge potential, and are thermalized at certain randomly distributed equilibration points by coupling to the background of impurity atoms and carriers in equilibrium. The sum of the thermo-ballistic and background currents is conserved, and is identified with the physical current. The current-voltage characteristic for nondegenerate systems and the zero-bias conductance for degenerate systems are expressed in terms of a reduced resistance. For arbitrary mean free path and arbitrary shape of the band edge potential profile, this quantity is determined from the solution of an integral equation, which also provides the quasi-Fermi level and the thermo-ballistic current. To illustrate the formalism, a number of simple examples are considered explicitly. The present work is compared with previous attempts towards a unified description of ballistic and diffusive transport.

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