Probing confined interfacial excitations in buried layers by Brillouin light scattering

Details Probing confined interfacial excitations in buried layers by Brillouin light scattering Probing confined interfacial excitations in buried layers by Brillouin light scattering

2001-11-03

arxiv.org/abs/cond-mat/0111046v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, key words: interface, interfacial waves, guided acoustic waves, acoustic waveguide

Scientific paper

10.1063/1.1484550

Brillouin light scattering from silicon oxynitride films grown on GaAs reveals a low frequency elastic wave excitation at frequencies lying below that of the Rayleigh surface wave. This mode, identified as an excitation localized by the interface, arises from the presence of a soft, thin transition layer between the film and substrate. Observations of this low frequency excitation offer a previously unexplored approach to characterize, non-destructively, the properties of buried interfaces.

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