Theory of Weak Localization in Ferromagnetic (Ga,Mn)As

Details Theory of Weak Localization in Ferromagnetic (Ga,Mn)As Theory of Weak Localization in Ferromagnetic (Ga,Mn)As

2008-11-27

arxiv.org/abs/0811.4585v1

Phys. Rev. B 79, 155207 (2009)

Physics

Condensed Matter

Materials Science

16 pages, 10 figures; submitted to Phys. Rev. B

Scientific paper

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn concentrations above 1% quantum interference corrections lead to negative magnetoresistance, i.e. to weak localization (WL) rather than weak antilocalization (WAL). Our work highlights key qualitative differences between (Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanism by which exchange splitting in the ferromagnetic state converts valence band WAL into WL. We comment on recent experimental studies and theoretical analyses of low-temperature magnetoresistance in (Ga,Mn)As which have been variously interpreted as implying both WL and WAL and as requiring an impurity-band interpretation of transport in metallic (Ga,Mn)As.

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