Effect of optical phonon scattering on the performance of GaN transistors

Details Effect of optical phonon scattering on the performance of GaN transistors Effect of optical phonon scattering on the performance of GaN transistors

2010-08-06

arxiv.org/abs/1008.1154v1

Physics

Condensed Matter

Materials Science

4 pages, 2 figures

Scientific paper

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors. The model is able to resolve these peculiarities, and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical phonon scattering is strong.

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