Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy

Details Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy

2009-03-13

arxiv.org/abs/0903.2377v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

Magnetite (Fe3O4) thin films on GaAs have been studied with HArd X-ray PhotoElectron Spectroscopy (HAXPES) and low-energy electron diffraction. Films prepared under different growth conditions are compared with respect to stoichiometry, oxidation, and chemical nature. Employing the considerably enhanced probing depth of HAXPES as compared to conventional x-ray photoelectron spectroscopy (XPS) allows us to investigate the chemical state of the film-substrate interfaces. The degree of oxidation and intermixing at the interface are dependent on the applied growth conditions; in particular, we found that metallic Fe, As2O3, and Ga2O3 exist at the interface. These interface phases might be detrimental for spin injection from magnetite into GaAs.

Affiliated with

Also associated with

No associations

Rating

Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-228744