Electron temperature in electrically isolated Si double quantum dots

Details Electron temperature in electrically isolated Si double quantum dots Electron temperature in electrically isolated Si double quantum dots

2011-12-14

arxiv.org/abs/1112.3190v2

Applied Physics Letters 100, 133503 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.

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