Unoccupied Band Structure of NbSe2 by Very-Low-Energy Electron Diffraction: Experiment and Theory

Details Unoccupied Band Structure of NbSe2 by Very-Low-Energy Electron Diffraction: Experiment and Theory Unoccupied Band Structure of NbSe2 by Very-Low-Energy Electron Diffraction: Experiment and Theory

2002-07-25

arxiv.org/abs/cond-mat/0207607v1

Physics

Condensed Matter

Strongly Correlated Electrons

17 pages, 11 Postscript figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.66.235403

A combined experimental and theoretical study of very-low-energy electron diffraction at the (0001) surface of 2H-NbSe2 is presented. Electron transmission spectra have been measured for energies up to 50 eV above the Fermi level with k|| varying along the GammaK line of the Brillouin zone. Ab initio calculations of the spectra have been performed with the extended linear augmented plane wave k-p method. The experimental spectra are interpreted in terms of three-dimensional one-electron band structure. Special attention is paid to the quasi-particle lifetimes: by comparing the broadening of the spectral structures in the experimental and calculated spectra the energy dependence of the optical potential Vi is determined. A sharp increase of Vi at 20 eV is detected, which is associated with a plasmon peak in the Im(-1/epsilon) function. Furthermore, the electron energy loss spectrum and the reflectivity of NbSe2 are calculated ab initio and compared with optical experiments. The obtained information on the dispersions and lifetimes of the unoccupied states is important for photoemission studies of the 3D band structure of the valence band.

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