Generation-recombination processes via acoustic phonons in a disorded graphene

Details Generation-recombination processes via acoustic phonons in a disorded graphene Generation-recombination processes via acoustic phonons in a disorded graphene

2011-07-14

arxiv.org/abs/1107.2708v1

Physics

Condensed Matter

Materials Science

7 pages, 7 figs

Scientific paper

Generation-recombination interband transitions via acoustic phonons are allowed in a disordered graphene because of violation of the energy-momentum conservation requirements. The generation-recombination processes are analyzed for the case of scattering by a short-range disorder and the deformation interaction of carriers with in-plane acoustic modes. The generation-recombination rates were calculated for the cases of intrinsic and heavily-doped graphene at room temperature. The transient evolution of nonequilibrium carriers is described by the exponential fit dependent on doping conditions and disorder level. The characteristic relaxation times are estimated to be about 150 - 400 ns for sample with the maximal sheet resistance ~5 kOhm. This rate is comparable with the generation-recombination processes induced by the thermal radiation.

Affiliated with

Also associated with

No associations

Rating

Generation-recombination processes via acoustic phonons in a disorded graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Generation-recombination processes via acoustic phonons in a disorded graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Generation-recombination processes via acoustic phonons in a disorded graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-224617