Simple mechanism for a positive exchange bias

Details Simple mechanism for a positive exchange bias Simple mechanism for a positive exchange bias

1998-03-04

arxiv.org/abs/cond-mat/9803054v1

Physics

Condensed Matter

Materials Science

10 pages, 2 figures, to be published on May 1 issue of PRB

Scientific paper

10.1103/PhysRevB.58.97

We argue that the interface coupling, responsible for the positive exchange bias (HE) observed in ferromagnetic/compensated antiferromagnetic (FM/AF) bilayers, favors an antiferromagnetic alignment. At low cooling field this coupling polarizes the AF spins close to the interface, which spin configuration persists after the sample is cooled below the Neel temperature. This pins the FM spins as in Bean's model and gives rise to a negative HE. When the cooling field increases, it eventually dominates and polarizes the AF spins in an opposite direction to the low field one. This results in a positive HE. The size of HE and the crossover cooling field are estimated. We explain why HE is mostly positive for an AF single crystal, and discuss the role of interface roughness on the magnitude of HE, and the quantum aspect of the interface coupling.

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