Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot

Details Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot

2007-09-11

arxiv.org/abs/0709.1730v1

Phys. Rev. B 78, 041306(R) (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.78.041306

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.

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