Reentrance effect in a graphene n-p-n junction coupled to a superconductor

Details Reentrance effect in a graphene n-p-n junction coupled to a superconductor Reentrance effect in a graphene n-p-n junction coupled to a superconductor

2007-04-19

arxiv.org/abs/0704.2487v1

Phys. Rev. B 75, 241401(R) (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.75.241401

We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n junction initially increases upon lowering the temperature, while the coherence time of the electron-hole pairs is still less than their lifetime, but then drops back again when the coherence time exceeds the lifetime. This reentrance effect, known from diffusive conductors and ballistic quantum dots, provides a method to detect phase coherent Klein tunneling of electron-hole pairs.

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