Substrate temperature changes during MBE growth of GaMnAs

Details Substrate temperature changes during MBE growth of GaMnAs Substrate temperature changes during MBE growth of GaMnAs

2007-04-19

arxiv.org/abs/0704.2485v1

J.Appl.Phys. 102, 083536 (2007)

Physics

Condensed Matter

Materials Science

5 pages, 5 figures Submitted to Journal of Applied Physics

Scientific paper

10.1063/1.2800798

Remarkably big increase of the substrate temperature during the
low-temperature MBE growth of GaMnAs layers is observed by means of band gap
spectroscopy. It is explained and simulated in terms of changes in the
absorption/emission characteristics of the growing layer. Options for the
temperature variation damping are discussed.

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