Theory of Spin Torque Assisted Thermal Switching of Single Free Layer

Details Theory of Spin Torque Assisted Thermal Switching of Single Free Layer Theory of Spin Torque Assisted Thermal Switching of Single Free Layer

2012-04-05

arxiv.org/abs/1204.1190v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

submitted to IEEE Trans. Magn. as the conference proceedings of Intermag 2012

Scientific paper

The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted magnetization switching, and found that the value of the exponent $b$ in the switching rate formula significantly affects the estimation of the retention time of magnetic random access memory. Based on the Fokker-Planck approach, we also showed that the value of $b$ should be two, not unity as argued in the previous works.

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