Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene

Details Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene

2010-05-20

arxiv.org/abs/1005.3726v2

PRB 82, 121405(R) (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevB.82.121405

Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random doping produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semiconductor arises.

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