Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator

Details Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator

1998-12-03

arxiv.org/abs/cond-mat/9812061v1

Physics

Condensed Matter

Materials Science

4 pages; 4 figures included in text; Revtex

Scientific paper

10.1103/PhysRevLett.83.1003

We demonstrate theoretically that the electronic ground state of the potassium-covered Si(111)-B surface is a Mott insulator, explicitly contradicting band theory but in good agreement with recent experiments. We determine the physical structure by standard density-functional methods, and obtain the electronic ground state by exact diagonalization of a many-body Hamiltonian. The many-body conductivity reveals a Brinkman-Rice metal-insulator transition at a critical interaction strength; the calculated interaction strength is well above this critical value.

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